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LN has a very large capability of 'piezoelectricity' which generate an electric potential in response to applied mechanical stress.
Utilizing this characteristics, it is used as a SAW Filter.
Up to 4 inches diameter wafer is available, and a high level of surface flatness, orientation-flat accuracy and edge profiling accuracy can be finished.
Broad range of wafer surface orientation(crystal axis) including 128°Y and 64°Y can be provided.
One-side mirror polishing is mainly used in order to prevent radio noise(spurious output) from the back-side of the wafer, which is characteristic of a SAW Filter. With mechano-chemical polishing using colloidal silica, it achieves a high spec mirror face roughness at several tens of nanometers.
The roughness of the back-side surface of the wafer widely varies from Ra=0.1µm to 4µm.
The thickness of wafer widely varies from 200µm to 1mm, and it is required highly accurate flatness and very few thickness variation.
LT has a very large capability of 'piezoelectricity' which generate an electric potential in response to applied mechanical stress.
Utilizing this characteristics, it is used as a SAW Filter.
Up to 4 inches diameter wafer is available, and wafer surface orientation(crystal axis) and orientation-flat direction can freely be selected.
One-side mirror polishing is mainly used in order to prevent radio noise(spurious output) from the back-side of the wafer, which is characteristic of a SAW Filter. With mechano-chemical polishing using colloidal silica, it achieves a high spec mirror face roughness at several tens of nanometers.
The roughness of the back-side surface of the wafer widely varies from Ra=0.1µm to 3µm.
The thickness of wafer widely varies from 200µm to 1mm, and it is required highly accurate flatness and very few thickness variation.
Although its piezoelectricity is not so large, it is used as a filter for small PHS and key-less entry due to its temperataure stable feature(zero temperature coefficient of frequency).
Since the crystal is deliquenscent, it requires a technology such as atomospheric control for storage and device production.
3 and 4 inches diameters wafer are available.
The main crystal axis is 45°X.
One-side mirror polishing is mainly used in order to prevent radio noise(spurious output) from the back-side of the wafer, which is characteristic of a SAW Filter. With mechano-chemical polishing using colloidal silica, it achieves a high spec mirror face roughness at several tens of nanometers.
The roughness of the back-side surface of the wafer widely varies from Ra=0.1µm to 4µm.
The thickness of wafer widely varies from 200µm to 1mm, and it is required highly accurate flatness and thickness variation.
LN has a characteristic of large birefringence. Birefringence is the difference between the normal ray refractive index and extraordinary ray refractive index.
Since LN has a birefringence of 10 times greater than quartz and allows a low-pass filter to be thinly built, it is used in top class Digital S.L.R.(single-lens refles) Cameras.
The rectangular shape wafer is available, and the size and thickness can freely be chosen.
Mirror polishing on both sides of rectangular wafer.
It is a polishing process to achieve highly accurate flatness and very few thickness variation, which are definitely required for optical application.
LN has a characteristic of large birefringence. Birefringence is the difference between the normal ray refractive index and extraordinary ray refractive index.
Since LN has a birefringence of 10 times greater than quartz and allows a prism for pickup such as that of MD, CD and DVD to be thinly built.
Both of rectangular wafer and stick shape are available, and size can freely be chosen.
Most of customers using As-sliced materials, however polished materials are available per request.
Using special tray designed for the material size, and deliver to the customer.
LN has a very large capability of 'piezoelectricity' which generate an electric potential in response to applied mechanical stress.
Utilizing this characteristic, it is used as a Gyro Sensor for transportation equipment in land, maline and aviation.
Up to 4 inches diameter wafer is available, and wafer surface orientation(crystal axis) and orientation-flat direction can freely be selected.
Both-side lapping and both-side polishing are available.
